Another option worth discussing is to use FGH30N60LSD devices. It is a 30A/600V IGBT with a saturation voltage VCE(SAT) of only 1.1V. Its turn-off loss EOFF is very high, reaching 10mJ, so it is only suitable for low frequency conversion. The on-resistance RDS(ON) of a 50 milliohm MOSFET at operating temperature is 100 milliohms. Therefore, at 11A, it has the same VDS as the VCE (SAT) of the IGBT. Since this IGBT is based on an older breakdown technology, VCE(SAT) does not change much with temperature. Therefore, this IGBT can reduce the overall loss in the output bridge, thereby increasing the overall efficiency of the inverter. FGH30N60LSD IGBT switches from one power conversion technology to another dedicated topology every half cycle is also very useful. IGBT is used as a topological switch here. In the faster conversion, conventional and fast recovery super junction devices are used. For the 1200V dedicated topology and full bridge structure, the aforementioned FGL40N120AND is very suitable for the switch of the new high-frequency solar inverter. When special technology requires diodes, Stealth II, Hyperfast™ II diodes and carbon silicon diodes are good solutions.

Please kindly take a view and better to understand us:

20000 watt pure sine wave ac inverter