Solar Inverter 1Kw

Gallium arsenide (GaAs) boasts the highest performance of any photovoltaic material, reaching 28.8%. This is because GaAs has a direct and more favourable band gap of 1.43 eV – resulting in improved absorption with thinner layers and reduced energy loss. Additionally, GaAs has superior electron-transport properties to silicon. However, it is very expensive to produce as it requires high material purity, which generally limits it to space-based applications (such as satellites and rovers).

Cadmium Telluride

Cadmium telluride (CdTe) is a high-efficiency thin-film photovoltaic technology which has achieved an efficiency of 22.1%. CdTe has a similar band gap to GaAs at 1.44 eV, giving it the same advantages as seen in GaAs – good absorption in thin films and low photon energy losses. This material also boasts the possibility to be flexible, very low costs, and it has produced commercial solar panels that are cheaper than silicon with much shorter energy payback times (although with lower efficiency). Despite these advantages, there are some issues – cadmium is highly toxic and tellurium is very rare, making the long-term viability of this technology uncertain for now.

Copper Indium Gallium Selenide

Copper indium gallium selenide (CIGS) has achieved similar performances to CdTe devices, with a peak of 22.6%. The compound has the chemical formula CuInxGa(1-x)Se2 where x can take a value between 0 and 1. This tunability of the chemical structure enables the band gap of the material to be varied between 1.0 eV (x = 1, pure copper indium selenide) and 1.7 eV (x = 0, pure copper gallium selenide). However, like GaAs cells, CIGS are expensive to fabricate and result in solar panels that cannot compete with the current commercial technologies. Furthermore, like tellurium, indium is very rare, limiting the long-term potential of this technology.

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